DIODES INC FZT853 Bipolar (BJT) Single Transistor, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE Sigma 302963 using 3200 w/s @ 6

using 3200 w/s @ 6

45 cm Weight 2

zinc die-cast base Threaded Connector 5/8" Arm Length From 18

Ideal for medium-format keyboards

Object Based Motion Detection Object based motion detection allows you to specify what type of motion will trigger predefined events

DIODES INC FZT853 Bipolar (BJT) Single Transistor, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE Sigma 302963 using 3200 w/s @ 6The FZT853 is a 100V NPN Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL STD 202 standard, method 208. High continuous collector current Low saturation voltages hFE specified up to 10A for a high gain hold up Complementary PNP type FZT953 AEC Q101 qualified UL94V 0 Flammability rating Applications Automotive, Aerospace, Defence, Military Warnings ESD sensitive device, take proper precaution while